BSZ067N06LS3G

BSZ067N06LS3 G OptiMOSTM3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSZ067N06LS3 G Product Summary V DS R DS(on),max ID 60 6.7 20 V mΩ A Package Marking PG-TSDSON-8 067N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) Value 20 20 20 20 Unit A 14 80 118 ±20 mJ V I D,pulse E AS V GS T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 3) 4) Rev. 2.3 page 1 2009-11-05 Free Datasheet http://www.datasheet4u.com/ BSZ067N06LS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic categ...