Type
BSZ076N06NS3 G
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimiz...
Type
BSZ076N06NS3 G
OptiMOSTM3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSZ076N06NS3 G
Product Summary V DS R DS(on),max ID 60 7.6 20 V mΩ A
Package Marking
PG-TSDSON-8 076N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C V GS=10 V, T C=25 °C, R thJA =50K/W J41 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage
1) 2) 3)
Value 20 20
Unit A
14 80 118 ±20 mJ V
I D,pulse E AS V GS
T C=25 °C I D=20 A, R GS=25 Ω
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 75A.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) See figure 3 for more detailed information
5)
See figure 13 for more detailed information
Rev.2.4
page 1
2009-11-11
Free Datasheet http://www.datasheet4u.com/
BSZ076N06NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 3) O...