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BSZ086P03NS3G Dataheets PDF



Part Number BSZ086P03NS3G
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet BSZ086P03NS3G DatasheetBSZ086P03NS3G Datasheet (PDF)

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.6 -40 PG-TSDSON-8 V mΩ A Type BSZ086P03NS3E G Package PG-TSDSON-8 Marking 086P3N Lead free Yes Halogen free .

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BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.6 -40 PG-TSDSON-8 V mΩ A Type BSZ086P03NS3E G Package PG-TSDSON-8 Marking 086P3N Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T A=25 °C T A=25 °C2) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) Value -40 -40 -13.5 -160 105 ±25 69 2.1 -55 … 150 Unit A T C=25 °C3) I D=-20 A, R GS=25 Ω mJ V W T j, T stg JESD22-A114 HBM °C 1C (1 kV - 2 kV) 260 55/150/56 °C J-STD20 and JESD22 Rev. 2.02 page 1 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ086P03NS3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) Values typ. max. Unit - - 1.8 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-105 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-25 V, V DS=0 V V GS=-6 V, I D=-20 A -30 -3.1 -2.5 -1.9 V Zero gate voltage drain current I DSS - - -1 µA - 8.7 -10 -100 13.4 nA mΩ V GS=-10 V, I D=-20 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=-20 A 30 6.5 2.2 43 8.6 Ω S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 3) See Fig. 3 for more detailed information Rev. 2.02 page 2 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ086P03NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=-40 A, T j=25 °C V R=15 V, I F=|I S|, di F/dt =100 A/µs 40 160 -1.1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-15 V, I D=20 A, V GS=0 to -10 V 16.1 5.0 7.4 18.4 43.2 -4.5 34.9 21.4 6.7 11.1 25.7 57.5 46.4 V nC nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=10 V, I D=-20 A, R G=6 Ω V GS=0 V, V DS=-15 V, f =1 MHz 3190 1520 110 16 46 35 8 4785 2280 165 24 69 53 12 ns pF Values typ. max. Unit Reverse recovery time t rr - 39 - ns Reverse recovery charge Q rr - 34 - nC Rev. 2.02 page 3 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ086P03NS3 G 1 Power dissipation P tot=f(T C); t p≤10 s 2 Drain current I D=f(T C); |V GS|≥10 V; t p≤10 s 80 48 70 44 40 60 36 32 50 P tot [W] 40 -I D [A] 28 24 20 16 30 20 12 8 4 10 0 0 40 80 120 160 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C1); D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 101 10 102 1 µs 100 100 µs 1 ms 10 ms limited by on-state resistance DC 100 1 0.5 Z thJS [K/W] 10-1 0.1 100 101 10 -I D [A] 0.2 0.1 0.05 0.02 0.01 single pulse 100 1 10 -1 0.1 10-2 0.01 0.1 1 10 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 2.02 page 4 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ086P03NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 -10 V -5.0 V -4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 40 35 -4.0 V 30 30 R DS(on) [mΩ ] 25 -4.5 V -I D [A] 20 -4.2V 20 15 -5.0 V -4.0 V 10 10 -6V -10 V -3.7 V -3.5 V 5 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 60 50 40 40 -I D [A] 30 20 25 °C 150 °C g fs [S] 20 0 0 1 2 3 4 5 6 0 10 20 30 10 0 -V GS [V] -I D [A] Rev. 2.02 page 5 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ086P03NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-20 A; V GS=-10 V 10 .


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