BSZ088N03MSG

BSZ088N03MS G OptiMOS™3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOMSW for High Frequency SMPS 100% avalanche tested N-channel Very low on-resistance R DS(on) @ V GS=4.5 V Excellent gate charge x R DS(on) product (FOM) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen free according to IEC61249-2-21 Type BSZ088N03MS G Package PG-TSDSON-8 Marking 088N03M Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 8.0 9.7 40 PG-TSDSON-8 A V mΩ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=4.5 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 40 32 40 29 Unit A 11 160 20 25 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev. 2.0 page 1 2010-03-18 Free Datasheet http://www.datasheet4u.com/ BSZ088N03MS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 35 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. ...