BSZ100N06LS3G

BSZ100N06LS3 G OptiMOS 3 Power-Transistor TM Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSZ100N06LS3 G Product Summary V DS R DS(on),max ID 60 10 20 V mΩ A Package Marking PG-TSDSON-8 100N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage 1) 2) 3) Value 20 20 20 20 Unit A 11 80 55 ±20 mJ V I D,pulse E AS V GS T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 55 A. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 4) 5) Rev. 2.3 page 1 2009-11-11 Free Datasheet http://www.datasheet4u.com/ BSZ100N06LS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60...