BSZ120P03NS3EG

BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC 1) for target applications 150 °C operating temperature V GS=25 V, specially suited for notebook applications Pb-free; RoHS compliant ESD protected applications: battery management, load switching Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 12 -40 V mΩ A PG-TSDSON-8 Type BSZ120P03NS3E G Package PG-TSDSON-8 Marking 120P3NE Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T A=25 °C T A=25 °C2) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) Value -40.0 -40 -11.0 -160 73 ±25 52 2.1 -55 … 150 Unit A T C=25 °C3) I D=-20 A, R GS=25 Ω mJ V W T j, T stg JESD22-A114 HBM °C class 2 (> 2 kV) 260 55/150/56 °C J-STD20 and JESD22 Rev. 2.1 page 1 2009-11-16 Free Datasheet http://www.datasheet4u.com/ BSZ120P03NS3E G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) Values typ. max. Unit - - 2.4 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static charact...