BSZ130N03LSG

BSZ130N03LS G OptiMOS™3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type BSZ130N03LS G Package PG-TSDSON-8 Marking 130N03L Product Summary V DS R DS(on),max ID 30 13 35 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 35 22 28 18 Unit A 10 140 20 9 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω I D=35 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 2.0 page 1 2010-03-23 Free Datasheet http://www.datasheet4u.com/ BSZ130N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 25 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Cond...