BSZ165N04NSG

BSZ165N04NS G OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type BSZ165N04NS G Package PG-TSDSON-8 Marking 165N04N Product Summary V DS R DS(on),max ID 40 16.5 31 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 31 20 Unit A 8.9 124 20 5 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev. 2.0 page 1 2010-03-24 Free Datasheet http://www.datasheet4u.com/ BSZ165N04NS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 25 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA 6 c...