BSZ340N08NS3 G
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/...
BSZ340N08NS3 G
OptiMOSTM3 Power-
Transistor
Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSZ340N08NS3 G
Product Summary V DS R DS(on),max ID 80 34 23 V mΩ A
Package Marking
PG-TSDSON-8 340N08N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage
1) 2)
Value 23 15
Unit A
6 92 20 ±20 mJ V
I D,pulse E AS V GS
T C=25 °C I D=12 A, R GS=25 Ω
J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information
Rev. 2.2
page 1
2009-11-13
Free Datasheet http://www.datasheet4u.com/
BSZ340N08NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 32 2.1 -55 ... 150 55/150/56 °C Unit W
Parameter
Symbol Conditions...