Type
OptiMOSTM3 Power-Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...
Type
OptiMOSTM3 Power-
Transistor
Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
BSZ900N20NS3 G
Product Summary VDS RDS(on),max ID
200 V 90 mW 15.2 A
PG-TSDSON-8
Type BSZ900N20NS3 G
Package
Marking
PG-TSDSON-8 900N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
ID
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=7.6 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3
Value
15.2 10.7 61 100 10 ±20 62.5 -55 ... 150 55/150/56
Unit A
mJ kV/µs V W °C
Rev. 2.2
page 1
2011-07-14
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction - ambient
R thJA
6 cm2 cooling area3)
BSZ900N20NS3 G
min.
Values typ.
Unit max.
- - 2.5 K/W - - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 ...