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PTVS17VP1UP Dataheets PDF



Part Number PTVS17VP1UP
Manufacturers NXP
Logo NXP
Description 600 W Transient Voltage Suppressor
Datasheet PTVS17VP1UP DatasheetPTVS17VP1UP Datasheet (PDF)

PTVSxP1UP series 600 W Transient Voltage Suppressor Rev. 2 — 6 January 2011 Product data sheet 1. Product profile 1.1 General description 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 1.2 Features and benefits „ Rated peak pulse power: PPPM = 600 W „ Very low package height: 1 mm „ Reverse standoff voltage range: „ Small plastic package suitable for VRWM = 3.3 .

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PTVSxP1UP series 600 W Transient Voltage Suppressor Rev. 2 — 6 January 2011 Product data sheet 1. Product profile 1.1 General description 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 1.2 Features and benefits „ Rated peak pulse power: PPPM = 600 W „ Very low package height: 1 mm „ Reverse standoff voltage range: „ Small plastic package suitable for VRWM = 3.3 V to 64 V surface-mounted design „ Reverse current: IRM = 0.001 μA „ AEC-Q101 qualified 1.3 Applications „ „ „ „ Power supply protection Automotive application Industrial application Power management 1.4 Quick reference data Table 1. Symbol PPPM VRWM [1] Quick reference data Parameter rated peak pulse power reverse standoff voltage Conditions [1] Min 3.3 Typ - Max 600 64 Unit W V In accordance with IEC 61643-321 (10/1000 μs current waveform). Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PTVSxP1UP series 600 W Transient Voltage Suppressor 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 sym035 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name PTVSxP1UP series [1] Type number[1] Description plastic surface-mounted package; 2 leads Version SOD128 - The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V. 4. Marking Table 4. Marking codes Marking code AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ B1 B2 Type number PTVS20VP1UP PTVS22VP1UP PTVS24VP1UP PTVS26VP1UP PTVS28VP1UP PTVS30VP1UP PTVS33VP1UP PTVS36VP1UP PTVS40VP1UP PTVS43VP1UP PTVS45VP1UP PTVS48VP1UP PTVS51VP1UP PTVS54VP1UP PTVS58VP1UP PTVS60VP1UP PTVS64VP1UP Marking code B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BJ BK Type number PTVS3V3P1UP PTVS5V0P1UP PTVS6V0P1UP PTVS6V5P1UP PTVS7V0P1UP PTVS7V5P1UP PTVS8V0P1UP PTVS8V5P1UP PTVS9V0P1UP PTVS10VP1UP PTVS11VP1UP PTVS12VP1UP PTVS13VP1UP PTVS14VP1UP PTVS15VP1UP PTVS16VP1UP PTVS17VP1UP PTVS18VP1UP PTVSXP1UP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 6 January 2011 2 of 12 Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PTVSxP1UP series 600 W Transient Voltage Suppressor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Parameter rated peak pulse power rated peak pulse current Conditions [1] [1] Min - Max 600 see Table 9 and 10 100 150 +150 +150 Unit W IFSM Tj Tamb Tstg [1] Non-repetitive peak forward current junction temperature ambient temperature storage temperature single half-sine wave; tp = 8.3 ms −55 −65 A °C °C °C In accordance with IEC 61643-321 (10/1000 μs current waveform). Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Per diode VESD [1] [2] Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) [1][2] Min - Max 30 Unit kV Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. Soldering point of cathode tab. Table 7. Standard Per diode ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 6. Thermal characteristics Table 8. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 200 120 60 12 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] [4] PTVSXP1UP_SER thermal resistance from junction to solder point [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 6 January 2011 3 of 12 F r e e D a t a s h e NXP Semiconductors PTVSxP1UP series 600 W Transient Voltage Suppressor 7. Characteristics Table 9. Characteristics per type; PTVS3V3P1UP to PTVS7V0P1UP Tj = 25 °C unless otherwise specified. Type number Reverse standoff voltage VRWM (V) IR = 10 mA Max PTVS3V3P1UP PTVS5V0P1UP PTVS6V0P1UP PTVS6V5P1UP PTVS7V0P1UP 3.3 5.0 6.0 6.5 7.0 Min 5.20 6.40 6.67 7.22 7.78 Typ 5.60 6.70 7.02 7.60 8.20 Max 6.00 7.00 7.37 7.98 8.60 Breakdown voltage VBR (V) Reverse leakage current IRM (μA) at VRWM (V) Typ 5 5 5 5 3 Max 600 400 400 250 100 Max 8.0 9.2 10.3 11.2 12.0 IPPM (A) 75.0 65.2 58.3 53.6 50.0 Clamping voltage VCL (V) Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP Tj = 25 °C unless otherwise specified. Type number Reverse stando.


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