Document
PTVSxP1UP series
600 W Transient Voltage Suppressor
Rev. 2 — 6 January 2011 Product data sheet
1. Product profile
1.1 General description
600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection.
1.2 Features and benefits
Rated peak pulse power: PPPM = 600 W Very low package height: 1 mm Reverse standoff voltage range: Small plastic package suitable for VRWM = 3.3 V to 64 V surface-mounted design Reverse current: IRM = 0.001 μA AEC-Q101 qualified
1.3 Applications
Power supply protection Automotive application Industrial application Power management
1.4 Quick reference data
Table 1. Symbol PPPM VRWM
[1]
Quick reference data Parameter rated peak pulse power reverse standoff voltage Conditions
[1]
Min 3.3
Typ -
Max 600 64
Unit W V
In accordance with IEC 61643-321 (10/1000 μs current waveform).
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode anode
[1]
Simplified outline
Graphic symbol
1 2
sym035
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3. Ordering information Package Name PTVSxP1UP series
[1]
Type number[1]
Description plastic surface-mounted package; 2 leads
Version SOD128
-
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4. Marking codes Marking code AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ B1 B2 Type number PTVS20VP1UP PTVS22VP1UP PTVS24VP1UP PTVS26VP1UP PTVS28VP1UP PTVS30VP1UP PTVS33VP1UP PTVS36VP1UP PTVS40VP1UP PTVS43VP1UP PTVS45VP1UP PTVS48VP1UP PTVS51VP1UP PTVS54VP1UP PTVS58VP1UP PTVS60VP1UP PTVS64VP1UP Marking code B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BJ BK Type number PTVS3V3P1UP PTVS5V0P1UP PTVS6V0P1UP PTVS6V5P1UP PTVS7V0P1UP PTVS7V5P1UP PTVS8V0P1UP PTVS8V5P1UP PTVS9V0P1UP PTVS10VP1UP PTVS11VP1UP PTVS12VP1UP PTVS13VP1UP PTVS14VP1UP PTVS15VP1UP PTVS16VP1UP PTVS17VP1UP PTVS18VP1UP
PTVSXP1UP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
2 of 12
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Parameter rated peak pulse power rated peak pulse current Conditions
[1] [1]
Min -
Max 600 see Table 9 and 10 100 150 +150 +150
Unit W
IFSM Tj Tamb Tstg
[1]
Non-repetitive peak forward current junction temperature ambient temperature storage temperature
single half-sine wave; tp = 8.3 ms
−55 −65
A °C °C °C
In accordance with IEC 61643-321 (10/1000 μs current waveform).
Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Per diode VESD
[1] [2]
Parameter electrostatic discharge voltage
Conditions IEC 61000-4-2 (contact discharge)
[1][2]
Min -
Max 30
Unit kV
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. Soldering point of cathode tab.
Table 7. Standard Per diode
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
6. Thermal characteristics
Table 8. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 200 120 60 12
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3] [4]
PTVSXP1UP_SER
thermal resistance from junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab.
All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
3 of 12
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NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
7. Characteristics
Table 9. Characteristics per type; PTVS3V3P1UP to PTVS7V0P1UP Tj = 25 °C unless otherwise specified. Type number Reverse standoff voltage VRWM (V) IR = 10 mA Max PTVS3V3P1UP PTVS5V0P1UP PTVS6V0P1UP PTVS6V5P1UP PTVS7V0P1UP 3.3 5.0 6.0 6.5 7.0 Min 5.20 6.40 6.67 7.22 7.78 Typ 5.60 6.70 7.02 7.60 8.20 Max 6.00 7.00 7.37 7.98 8.60 Breakdown voltage VBR (V) Reverse leakage current IRM (μA) at VRWM (V) Typ 5 5 5 5 3 Max 600 400 400 250 100 Max 8.0 9.2 10.3 11.2 12.0 IPPM (A) 75.0 65.2 58.3 53.6 50.0 Clamping voltage VCL (V)
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP Tj = 25 °C unless otherwise specified. Type number Reverse stando.