PG24FBTS6

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG24FBTS6 TVS Diode Array for ESD Protection in Portable Electronics E FEATURES 350 Watts peak pulse power (tp=8/20 s) G K B K 1 6 Transient protection for data lines to IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 8A(tp=8/20 s) Unidirectional protection of four I/O lines. C A IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) 2 5 DIM A B C D E D F G H I J K L H J 3 4 MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 F L G Low clamping voltage. Low operating and leakage current. Small package for use in portable electronics. J APPLICATIONS Cell phone handsets and accessories. Cordless Phones. Personal digital assistants (PDA’s) Notebooks, desktops PC & servers. Portable instrumentation. Set-Top Bosx, DVD Player. Digital Camera. 1. 2. 3. 4. 5. 6. (TVS) D1 COMMON ANODE (TVS) D2 (TVS) D3 COMMON ANODE (TVS) D4 Marking 6 5 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature ) SYMBOL PPK IPP Tj Tstg RATING 350 8 -55 150 -55 150 D4 D1 UNIT W A 1 6 4F 2 5 4 D3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance ) TEST CONDITION It=1mA VRWM=24V IPP=5A, tp=8/20 s IPP=8A, tp=8/20 s VR=0V,...