This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Silicon NPN epitaxial planar type (Tr) Silicon ...
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Silicon
NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device)
For CCD output circuits Features
Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
Package
Code SSMini6-F3-B Pin Name 1: Emitter 2: Base 3: Gate
Basic Part Number
DSC2G03 + CCD load device (Individual)
4: Source 5: Drain 6: Collector
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Marking Symbol: X1 Internal Connection
Unit V V V mA V mA mW °C °C
(C) 6 (D) 5 (S) 4
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current CCD Limiting element voltage load device Limiting element current Total power dissipation * Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Vmax Imax PT Tj Tstg Rating 30 20 3 50 40 10 125 150 –55 to +150
Tr
FET
1 (E)
2 (B)
3 (G)
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
Electrical Characteristics Ta = 25°C±3°C
Tr1 Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Symbol VCBO VEBO VBE hFE fT Conditions IC ...