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NCP5359

ON Semiconductor

Gate Driver

NCP5359 Gate Driver for Notebook Power Systems The NCP5359 is a high performance dual MOSFET gate driver optimized to dr...


ON Semiconductor

NCP5359

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Description
NCP5359 Gate Driver for Notebook Power Systems The NCP5359 is a high performance dual MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. Each of the drivers can drive up to 3 nF load with a 25 ns propagation delay and 20 ns transition time. Adaptive nonoverlap and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. A high floating top driver design can accommodate VBST voltage as high as 35 V, with transient voltages as high as 35 V. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an undervoltage lockout function guarantees the outputs are low when supply voltage is low, and a thermal shutdown function provides the IC with overtemperature protection. Features http://onsemi.com MARKING DIAGRAMS 8 8 1 SOIC−8 D SUFFIX CASE 751 N5359 ALYW G 1 DFN−10 MN SUFFIX CASE 485C A L Y W G N5359 ALYW G Faster Rise and Fall Times Thermal Shutdown Protection Adaptive Nonoverlap Circuit Floating Top Driver Accommodates Boost Voltages of up to 35 V Output Disable Control Turns Off Both MOSFETs Complies with VRM 11.1 Specifications Undervoltage Lockout Power Saving Operation Under Light Load Conditions Thermally Enhanced Package These are Pb−Free Devices = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS BST PWM ...




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