RUR020N02

RUR020N02 Nch 20V 2A Power MOSFET VDSS RDS(on) (Max.) ID PD 20V 105mW 2A 1W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant lApplication Road SW lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSMT3 (1) lInner circuit (1) Gate (2) Source (3) Drain (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value 20 2 6 10 1.0 0.54 150 -55 to +150 Datasheet Taping 180 8 3,000 TL XK Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.B RUR020N02 lThermal resistance Parameter Thermal resistance, junction - ambient Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 125 °C/W - - 231 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min. Typ. Max. Unit 20 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID = 1mA ΔTj referenced to 25°C Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS IGS...