NTTFS4800N

NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters Point of Load Power Load Switch Notebook Battery Management Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) TA = 25°C ID TA = 85°C 8.3 A 6.0 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.2 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 85°C 11.8 A 8.5 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT PD 4.5 W ID 5.0 A 3.6 PD 0.86 W ID 32 A 23 PD 33.8 W IDM TJ, Tstg IS dV/dt 57 A −55 to °C +150 28 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy EAS 36.6 mJ (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 27 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″...