N-Channel Power MOSFET
NTTFS4930N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 23 A
Features
• Low RDS(on) to Minimize Conduction Losses • Lo...
Description
NTTFS4930N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 23 A
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant Applications
DC−DC Converters Power Load Switch Notebook Battery Management Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VGS
±20 V
TA = 25°C
ID
7.2
A
TA = 85°C
5.2
TA = 25°C
PD
2.06 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
TA = 85°C
9.6
A
6.9
Power Dissipation RqJA ≤ 10 s (Note 1)
Continuous Drain Current RqJA (Note 2)
Steady State
TA = 25°C
TA = 25°C TA = 85°C
Power Dissipation RqJA (Note 2)
TA = 25°C
Continuous Drain Current RqJC (Note 1)
TC = 25°C TC = 85°C
Power Dissipation RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Drain to Source dV/dt
PD ID
PD ID
PD IDM TJ, Tstg IS dV/dt
3.61 W
4.5
A
3.2
0.79 W
23
A
16
20.2 W
92 −55 to +150
25 6.0
A °C
A V/ns
Single Pulse Drain−to−Source Avalanche Energy
EAS
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 12 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8″ from case for 10 s)
7.2 m...
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