NTTFS4985NF

NTTFS4985NF MOSFET – Power, Single, N-Channel, WDFN8 30 V, 64 A Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant Applications CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID PD 30 ±20 22 15.9 2.69 Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 32.4 TA = 85°C 23.4 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD ID PD ID PD IDM TJ, Tstg IS dV/dt 5.85 16.3 11.7 1.47 64 46 22.73 192 −55 to +150 32 6.0 Unit V V A W A W A W A W A °C A V/ns www.onsemi.com V(BR)DSS 30 V RDS(on) MAX 3.5 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 64 A N−Channel MOSFET D G 1 WDFN8 (m8FL) CASE 511AB S MARKING DIAGRAM 1 S D ...