CDBER40

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER40 (RoHs Device) Io = 200 mA V R = 40 Volts Features Low reverse current. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO 40 40 28 200 0.6 150 -65 +125 +125 V V V mA A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time I F = 1mA I F = 40mA V R = 30V Conditions Symbol Min Typ Max Unit VF IR CT T rr 0.38 1 0.2 5 5 V uA pF nS f = 1 MHz, and 0 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm REV:A QW-A1090 Page 1 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com...