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CDBER54 Dataheets PDF



Part Number CDBER54
Manufacturers Comchip
Logo Comchip
Description SMD Schottky Barrier Diode
Datasheet CDBER54 DatasheetCDBER54 Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER54 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gra.

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBER54 (RoHs Device) Io = 200 mA V R = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503(1308) 0.053(1.35) 0.045(1.15) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO I FRM 30 30 21 200 0.3 0.6 150 -65 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA V R = 25V Conditions Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 2 10 5 V Reverse current Capacitance between terminals Reverse recovery time IR CT T rr uA pF nS REV:A f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm QW-A1092 Page 1 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com/ SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER54) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (mA ) 100u 125 C O 100 10u 75 C O 10 1u 1 C 75 C C O 125 O -25 O C 100n 25 C -25 C O O O 0.1 0 0.2 0.4 0.6 0.8 25 10n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 120 Fig.4 - Current derating curve Average forward current(%) f=1MHz O T A =25 C Mounting on glass epoxy PCBs 100 80 60 40 20 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-A1092 Page 2 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com/ .


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