Document
AP60T03AS/P
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12mΩ 45A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AP) are available for low-profile applications.
TO-263(S)
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 ± 20 45 32 120 44 0.352 -55 to 175 -55 to 175
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 62 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200909032
Free Datasheet http://www.datasheet4u.com/
AP60T03AS/P
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.026
Max. Units 12 25 3 1 250 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA
25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135
Gate Threshold Voltage Forward Transconductance
2
o
VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ± 20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz
o
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=175 C)
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 23.3 16
Max. Units 1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
Free Datasheet http://www.datasheet4u.com/
AP60T03AS/P
125
90
T C =25 o C
100
10V 8.0V 6.0V ID , Drain Current (A)
60
T C =175 o C
10V 8.0V 6.0V 5.0V
ID , Drain Current (A)
75
5.0V
50
30
V GS =4.0V
25
V GS =4.0V
0 0.0 1.0 2.0 3.0 4.0
0.0 1.0 2.0 3.0 4.0 5.0
0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I D =20A T C =25 ℃
60 1.6
I D =20A V GS =10V Normalized RDS(ON)
RDS(ON) (mΩ )
40
1.2
20
0.8
0 3 5 7 9 11
0.4 -50 25 100 175
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.8
100
2.3
10 1.8
VGS(th) (V)
1.5
IS(A)
Tj=175 o C
Tj=25 o C
1.3
1
0.8
0.1 0 0.5 1
0.3 -50 25 100 175
V SD (V) , Source-to-Drain Voltage (V)
T j , Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Free Datasheet http://www.datasheet4u.com/
AP60T03AS/P
f=1.0MHz
12
10000
I D =20A VGS , Gate to Source Voltage (V)
9
V DS =16V V DS =20V V DS =24V C (pF)
1000
Ciss
6
Coss Crss
100
3
0 0 6 12 18 24
10
Q G , Total Gate Charge (nC)
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty Factor = 0.5
100
0.2
0.1
ID (A)
100us 1ms
10
0.1
0.05
0.02 0.01 Single Pulse
PDM
t T
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
T C =25 o C Single Pulse
1 0.1 1 10
10ms 100ms DC
100
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD VDS D
TO THE OSCILLOSCOPE
D RG + 10V G S
VDS
TO THE OSCILLOSCOPE 0.5 x RATED VDS
0.8 x RATED VDS
G S VGS
VGS
+ 1~ 3 mA IG ID
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
Free Datasheet http://www.datasheet4u.com/
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