2SD1154

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD1154 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1154 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IC= 4A; IB= 0.4A VCE= 350V; VBE= 0 VCE= 350V; VBE= 0;TC= 100℃ IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V tf Fall Time IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω MIN MAX UNIT 200 V 6 V 1 V 1.2 V 0.1 mA 1 5 mA 11 36 0.75 μs  hFE Classifications R Q P 11-15 11-22 18-36 NOTICE： ISC reserves the r...