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2SD1126K Dataheets PDF



Part Number 2SD1126K
Manufacturers Renesas
Logo Renesas
Description Silicon NPN Transistor
Datasheet 2SD1126K Datasheet2SD1126K Datasheet (PDF)

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 Free Datasheet http://www.datasheet4u.com/ 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperat.

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2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 Free Datasheet http://www.datasheet4u.com/ 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg ID Ratings Unit 120 V 120 V 7 V 10 A 15 A 50 W 150 °C –55 to +150 °C 10 A Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO 120 — voltage Emitter to base breakdown V(BR)EBO 7 — voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — — — 1000 — — — — — — — — — — — — 0.8 — 8.0 Max Unit — V — V 100 µA 10 µA 2000 1.5 V 3.0 V 2.0 V 3.5 V 3.0 V — µs — µs Test conditions IC = 25 mA, RBE = ∞ IE = 200 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A*1 IC = 5 A, IB = 10 mA*1 IC = 10 A, IB = 0.1 A*1 IC = 5 A, IB = 10 mA*1 IC = 10 A, IB = 0.1 A*1 ID = 10 A*1 IC = 5 A, IB1 = –IB2 = 10 mA Free Datasheet http://www.datasheet4u.com/ Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) Typical Output Characteristics 10 2.0 8 TC = 25°C 1.5 1.0 6 0.8 0.7 4 0.6 0.5 mA 2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) DC current transfer ratio hFE Collector current IC (A) 2SD1126(K) PW = 1 =m1s01mshso1t shOotperation PW Area of Safe Operation 30 iC (peak) 10 IC (max) 3 1.0 DC 0.3 TC = 25°C 0.1 0.03 3 10 30 100 300 Collector to emitter voltage VCE (V) 30,000 10,000 3,000 1,000 DC Current Transfer Ratio vs. Collector Current VCE = 3 V Pulse T C = 75°C 25 –25 300 100 30 0.3 1.0 3 10 30 Collector current IC (A) Collector current IC (A) Free Datasheet http://www.datasheet4u.com/ 2SD1126(K) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 3 VBE (sat) 1.0 0.3 VCE (sat) 500 200 lC/lB = 100 0.1 0.03 0.01 0.3 TC = 25°C Pulse 1.0 3 10 30 Collector current IC (A) Free Datasheet http://www.datasheet4u.com/ 2SD1126(K) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 2000 Sierra Point Parkway Continental Europe Brisbane, CA. 94005-1835 Dornacher Straße 3 USA D-85622 Feldkirchen Tel: 415-589-8300 München Fax: 415-583-4207 Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, .


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