isc Silicon NPN Power Transistor
2SD1117
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low C...
isc Silicon
NPN Power
Transistor
2SD1117
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio amplifier, series
regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.5
℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VB E(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current...