2SD1187

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.3A 0.3 0.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 6.0A; IB= 0.3A VCB= 100V ; IE= 0 0.9 1.4 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 1V 70 240 hFE-2 DC Current Gain IC= 6A ; VCE= 1V 30 COB Output Capacitance I...