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2SD1195

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 2.5A ·Low Saturation Voltage ·Complement to Type 2SB885 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer ...

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