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BR2508

Galaxy Semi-Conductor

(BR25005 - BR2510) SILICON BRIDGE RECTIFIERS

BL FEATURES GALAXY ELECTRICAL BR25005(W) - - - BR2510(W) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A SILICON BRIDGE ...


Galaxy Semi-Conductor

BR2508

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Description
BL FEATURES GALAXY ELECTRICAL BR25005(W) - - - BR2510(W) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A SILICON BRIDGE RECTIFIERS Rating to 1000V PRV Surge overload rating to 300 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded BR - W METAL HEAT SINK .452 (11.5) MAX .042(1.1) .090(2.0) PLASTIC .480(12.2) .425(10.8) plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Mounting: thru hole for # 8 screw mounting 1.181(30.0) 1.102(28.0) HOLE FOR NO.8 SCREW AC .732(18.6) .692(17.6) - + .468(11.9) .429(10.9) AC 1.181(30.0) 1.102(28.0) .732(18.6) .692(17.6) .033x 250 (0.8x 6.4) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BR 25005 (W) Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard output current @TA=50 BR 2501 (W) 100 70 100 BR 2502 (W) 200 140 200 BR 2504 (W) 400 280 400 25.0 BR 2506 (W) 600 420 600 BR 2508 (W) 800 560 800 BR 2510 (W) 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 12.5 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA=100 IFSM 300.0 A VF IR TJ TSTG 1.1 5.0 0.5 - 55 ---- + 15...




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