SILICON BRIDGE RECTIFIERS
BL
FEATURES
GALAXY ELECTRICAL
GBU10A - - - GBU10M
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 10.0 A
SILICON BRIDGE RECT IF...
Description
BL
FEATURES
GALAXY ELECTRICAL
GBU10A - - - GBU10M
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 10.0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique Plas tic m aterrial has U/L flam m ability clas s ification 94V-O Mounting pos ition: Any Glass passivated chip junctions
GBU
.933(23.7) .894(22.7) .185(4.7) .165(4.2) .160(4.1) .140(3.5) 45 .310(7.9) .290(7.4)
0
.140(3.56) .130(3.30)
+ +
.075(1.9)R.TYP.
.085(2.16) .065(1.65)
.740(18.8) .720(18.3)
_
.080(2.03) .060(1.52)
~
~
+
.100(2.54) .085(2.16) .190(4.83) .210(5.33)
.050(1.27) .040(1.02)
.710(18) .690(17.5)
.085(2.18) .075(1.90)
.022(.56) .018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU 10A
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard Tc=100 output current Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 10 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 (note 2) (note 1) Operating junction temperature range Storage temperature range
GBU 10B
100 70 100
GBU 10D
200 140 200
GBU 10G
400 280 400 10
GBU 10J
600 420 600
GBU 10K
800 560 800
GBU 10M
1000 700 1000
UNITS
V V V A
VRRM ...
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