2SD1525

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1525 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 20A, IB= 0.2A ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff current VEB= 5V, IC= 0 hFE-1 DC Current Gain IC= 20A; VCE= 5V hFE-2 DC Current Gain IC= 30A; VCE= 5V VECF C-E Diode Forward Voltage IF= 10A fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Switching Times ton Turn-On Time tstg Storage Time tf ...