BRIDGE RECTIFIERS. KBJ6M Datasheet

KBJ6M RECTIFIERS. Datasheet pdf. Equivalent

Part KBJ6M
Description (KBJ6A - KBJ6M) SILICON BRIDGE RECTIFIERS
Feature KBJ6A THRU KBJ6M Features · Glass Passivated Die Construction · High Case Dielectric Strength of 150.
Manufacture DEC
Datasheet
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KBJ6M
KBJ6A THRU KBJ6M
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
CURRENT 6.0 Amperes
VOLTAGE 50 to 1000 Volts
A
H
P
N
C _ BL
K
E
J
D
M
R
Mechanical Data
· Case : Molded Plastic
· Terminals : Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity : Molded on Body
· Mounting : Through Hole for #6 Screw
· Mounting Torque : 5.0 in-Ibs Maximum
· Weight : 6.6 grams (approx.)
· Marking : Type Number
G
KBJ
Dim Min Max Dim Min
A 24.80 25.20 J
3.30
B 14.70 15.30 K
1.50
C 4.00 Nominal L 9.30
D 17.20 17.80 M 2.50
E 0.90 1.10 N 3.40
G 7.30 7.70 P 4.40
H 3.10 O/ 3.40 O/ R
0.60
All Dimens ions in mm
Max
3.70
1.90
9.70
2.90
3.80
4.80
0.80
Maximum Ratings And Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
KBJ
6A
KBJ KBJ
6B 6D
KBJ KBJ KBJ
6G 6J 6K
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
VRMM
VRWM
VR
50 100 200 400 600 800
RMS Reverse voltage
VR(RMS)
35
70 140 280 420 560
Average Rectified Output Current @ TC=110
Io
6
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
170
Forward Voltage per element
@ IF=3.0 A
VFM
1.0
Peak Reverse Current at Rated
DC Blocking voltage
@ TC=25
@ TC=125
I2t Rating for Fusing (t<8.3ms) (Note 1)
IR
I2t
5.0
500
120
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance,
Junction to Case (Note 3)
Cj
R JA
80
6.0
Operating and Storage Temperature Range
Tj
TSTG
-65 to +150
KBJ
6M
1000
700
Units
Volts
Volts
Amps
Amps
Volts
A
A2S
pF
/W
Notes:
(1) Non-repetitive, for t > 1.0ms and < 8.3ms.
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(3) Thermal Resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm copper plate heat sink.
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KBJ6M
RATINGS AND CHARACTERISTIC CURVES KBJ6A THRU KBJ6M
6
With heats ink
5
4
3
Without heats ink
2
1
R es is tive or
Inductive load
0
25 50 75 100 125 150
T C , C AS E T E MP E R AT UR E (°C )
F ig. 1 F orward C urrent Derating C urve
180
160
S ingle half-s ine-wave
(J E DE C method)
Tj = 150°C
120
80
10
1.0
0.1
Tj = 25°C
P uls e width = 300µs
0.01
0
0.4 0.8 1.2 1.6 1.8
V F, INS TANTANE OUS F OR WAR D V OLTAG E (V )
F ig. 2 Typical F orward C haracteris tics (per element)
100
Tj = 25°C
f = 1MHz
10
40
0
1
10 100
NUMB E R OF C YC LE S AT 60 Hz
F ig. 3 Maximum Non-R epetitive S urge C urrent
1000
1
1
10
V R , R E V E R S E V OLTAG E (V )
F ig. 4 Typical J unction C apacitance
100
100
10
Tj = 125°C
Tj = 100°C
1.0 Tj = 50°C
0.1
0
Tj = 25°C
20 40
60 80 100 120 140
P E R C E NT OF R AT E D P E AK R E V E R S E V OLTAG E (%)
F ig. 5 Typical R evers e C haracteris tics
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