Bridge Rectifiers. GBJ2502-G Datasheet

GBJ2502-G Rectifiers. Datasheet pdf. Equivalent

Part GBJ2502-G
Description (GBJ25005-G - GBJ2510-G) Glass Passivated Bridge Rectifiers
Feature Glass Passivated Bridge Rectifiers Comchip SMD Diode Specialist GBJ25005-G Thru. GBJ2510-G Reverse.
Manufacture Comchip
Datasheet
Download GBJ2502-G Datasheet




GBJ2502-G
Glass Passivated Bridge Rectifiers
GBJ25005-G Thru. GBJ2510-G
Reverse Voltage: 50 to 1000V
Forward Current: 25.0A
RoHS Device
Comchip
SMD Diode Specialist
Features
- Rating to 1000V PRV.
-Ideal for printed circuit board
-Low forward voltage drop, high current capability.
GBJ
Φ0.134(3.4)
Φ0.122(3.1)
0.118(3.00)*45°
1.193(30.3)
1.169(29.7)
0.189(4.8)
0.173(4.4)
0.150(3.8)
0.134(3.4)
Mechanical Data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: Molded plastic, GBJ
-Mounting position: Any
-Weight: 6.81grams
0.106(2.7)
0.096(2.3)
+
0.094(2.4)
0.078(2.0)
0.043(1.1)
0.035(0.9)
~~_
0.402(10.2)
0.386(9.8)
0.303(7.7)
0.287(7.3)
0.303(7.7)
0.287(7.3)
SPACING
0.114(2.9)
0.098(2.5)
0.031(0.8)
0.023(0.6)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol GBJ
25005-G
GBJ
2501-G
GBJ
2502-G
GBJ
2504-G
GBJ
2506-G
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400 600
Maximum RMS Voltage
VRMS
35
70 140 280 420
Maximum DC Blocking Voltage
VDC
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
I(AV)
IFSM
50
100 200 400 600
25.0
4.2
350
Maximum Forward Voltage at 12.5A DC
VF
1.1
Maximum DC Reverse Current @TJ=25°C
At Rate DC Blocking Voltage @TJ=125°C
I2 T Rating for Fusing(t<8.3ms)
Typical Junction Capacitandce Per Element
(Note 1)
Typical Thermal Resistance (Note 2)
IR
I2t
CJ
RθJA
10.0
500
510
85
0.6
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
-55 to +150
-55 to +150
GBJ
2508-G
800
560
800
GBJ
2510-G
1000
700
1000
Unit
V
V
V
A
A
V
μA
A2s
pF
OC/W
OC
OC
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.
QW-BBR60
Comchip Technology CO., LTD.
REV:C
Page 1
Free Datasheet http://www.datasheet4u.com/



GBJ2502-G
Glass Passivated Bridge Rectifiers
Comchip
SMD Diode Specialist
Rating and Characteristics Curves (GBJ25005-G Thru. GBJ2510-G)
Fig. 1- Forward Current Derating
Curve
25
WITH HOCEAKSINK
20
Fig. 2- Typical Forward Characteristics
100
10.0
15
SINGLOECPHASE HALF WAVE 60HZ
RESISTIVE OR INDUCTIVE LOAD
10
5 WITHOOCUT HEA SINK
1.0
TJ = 25°C
PULSE WIDTH 300us
0.1
0.0
0
20 40 60 80 100 120 140
Case Temperature, (°C )
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, (V)
Fig. 3- Maximum Non-Repetitive
Surge Current
400
350
300
250
200
150
100
TJ=150°C
SINGLE-SINE-WAVE
(JEDEC METHOD)
50
0
1 10 100
Number of cycles at 60Hz
Fig. 4- Typical Junction Capacitance
1000
100
10
TJ=25°OCC,f=1MHz
1
1 1.0 10.0
Reverse Voltage , (V)
100
Fig.5- Typical Reverse Characteristics
1000
100
10
TJ=125O°CC
TJ=100°C
1.0 TJ=50°OCC
TJ=25°OCC
0.1 20 40 60 80 100
Percent of Rated Peak Reverse Voltage , (%)
QW-BBR60
Comchip Technology CO., LTD.
REV: C
Page 2
Free Datasheet http://www.datasheet4u.com/







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)