Document
Glass Passivated Bridge Rectifiers
Comchip
SMD Diode Specialist
GBJ25005-G Thru. GBJ2510-G
Reverse Voltage: 50 to 1000V Forward Current: 25.0A RoHS Device
Features
- Rating to 1000V PRV. -Ideal for printed circuit board -Low forward voltage drop, high current capability.
Φ0.134(3.4) Φ0.122(3.1) 1.193(30.3) 1.169(29.7)
GBJ
0.118(3.00)*45°
0.189(4.8) 0.173(4.4) 0.150(3.8) 0.134(3.4) Φ0.134(3.4) Φ0.122(3.1) 0.114(2.9) 0.098(2.5)
0.198 MAX (5.1)
0.800(20.30) 0.776(19.70)
Mechanical Data
-Epoxy: U/L 94-V0 rate flame retardant. -Case: Molded plastic, GBJ -Mounting position: Any -Weight: 6.81grams
0.106(2.7) 0.096(2.3) 0.094(2.4) 0.078(2.0) 0.043(1.1) 0.035(0.9)
+
~ ~ _
0.165(4.2) 0.142(3.6) 0.708(18.0) 0.669(17.0)
0.441(11.2) 0.425(10.8)
0.402(10.2) 0.303(7.7) 0.303(7.7) SPACING 0.386(9.8) 0.287(7.3) 0.287(7.3)
0.031(0.8) 0.023(0.6)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20%
O
Parameter
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Maximum Average Forward (With heatsink Note2) Rectified Current @Tc=100°C (without hestsink)
Symbol VRRM VRMS VDC I(AV) IFSM
GBJ 25005-G 50 35 50
GBJ 2501-G 100 70 100
GBJ 2502-G 200 140 200
GBJ 2504-G 400 280 400 25.0 4.2 350 1.1 10.0 500 510 85 0.6 -55 to +150 -55 to +150
GBJ 2506-G 600 420 600
GBJ 2508-G 800 560 800
GBJ 2510-G 1000 700 1000
Unit
V V V A A
Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC Method) Maximum Forward Voltage at 12.5A DC Maximum DC Reverse Current At Rate DC Blocking Voltage I T Rating for Fusing(t<8.3ms) Typical Junction Capacitandce Per Element (Note 1) Typical Thermal Resistance (Note 2) T Operating Temperature Range Storage Temperature Range
2
VF IR It CJ RθJA TJ TSTG
2
V μA As pF
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@TJ=25°C @TJ=125°C
2
C/W
O
C C
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Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.
REV:C
QW-BBR60
Page 1
Comchip Technology CO., LTD.
Free Datasheet http://www.datasheet4u.com/
Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (GBJ25005-G Thru. GBJ2510-G)
Fig. 1- Forward Current Derating Curve
25
O WITH HEAKSINK C
Comchip
SMD Diode Specialist
Fig. 2- Typical Forward Characteristics
100
20
Instantaneous Forward Current, (A)
Average Forward Current, (A)
10.0
15
O SINGLE CPHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD
1.0
T J = 25°C PULSE WIDTH 300us
10
0.1
5
O WITHOUT C HEA SINK
0.0
0.01 0 20 40 60 80 100 120 140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Case Temperature, (°C )
Instantaneous Forward Voltage, (V)
Fig. 3- Maximum Non-Repetitive Surge Current
400 1000
Fig. 4- Typical Junction Capacitance
Peak Forward Surge Current, (A)
350 300
Capacitance, (pF)
250 200.