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GBJ2508-G Dataheets PDF



Part Number GBJ2508-G
Manufacturers Comchip
Logo Comchip
Description (GBJ25005-G - GBJ2510-G) Glass Passivated Bridge Rectifiers
Datasheet GBJ2508-G DatasheetGBJ2508-G Datasheet (PDF)

Glass Passivated Bridge Rectifiers Comchip SMD Diode Specialist GBJ25005-G Thru. GBJ2510-G Reverse Voltage: 50 to 1000V Forward Current: 25.0A RoHS Device Features - Rating to 1000V PRV. -Ideal for printed circuit board -Low forward voltage drop, high current capability. Φ0.134(3.4) Φ0.122(3.1) 1.193(30.3) 1.169(29.7) GBJ 0.118(3.00)*45° 0.189(4.8) 0.173(4.4) 0.150(3.8) 0.134(3.4) Φ0.134(3.4) Φ0.122(3.1) 0.114(2.9) 0.098(2.5) 0.198 MAX (5.1) 0.800(20.30) 0.776(19.70) Mechanical Data -Epo.

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Glass Passivated Bridge Rectifiers Comchip SMD Diode Specialist GBJ25005-G Thru. GBJ2510-G Reverse Voltage: 50 to 1000V Forward Current: 25.0A RoHS Device Features - Rating to 1000V PRV. -Ideal for printed circuit board -Low forward voltage drop, high current capability. Φ0.134(3.4) Φ0.122(3.1) 1.193(30.3) 1.169(29.7) GBJ 0.118(3.00)*45° 0.189(4.8) 0.173(4.4) 0.150(3.8) 0.134(3.4) Φ0.134(3.4) Φ0.122(3.1) 0.114(2.9) 0.098(2.5) 0.198 MAX (5.1) 0.800(20.30) 0.776(19.70) Mechanical Data -Epoxy: U/L 94-V0 rate flame retardant. -Case: Molded plastic, GBJ -Mounting position: Any -Weight: 6.81grams 0.106(2.7) 0.096(2.3) 0.094(2.4) 0.078(2.0) 0.043(1.1) 0.035(0.9) + ~ ~ _ 0.165(4.2) 0.142(3.6) 0.708(18.0) 0.669(17.0) 0.441(11.2) 0.425(10.8) 0.402(10.2) 0.303(7.7) 0.303(7.7) SPACING 0.386(9.8) 0.287(7.3) 0.287(7.3) 0.031(0.8) 0.023(0.6) Dimensions in inches and (millimeter) Maximum ratings and electrical characteristics Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% O Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward (With heatsink Note2) Rectified Current @Tc=100°C (without hestsink) Symbol VRRM VRMS VDC I(AV) IFSM GBJ 25005-G 50 35 50 GBJ 2501-G 100 70 100 GBJ 2502-G 200 140 200 GBJ 2504-G 400 280 400 25.0 4.2 350 1.1 10.0 500 510 85 0.6 -55 to +150 -55 to +150 GBJ 2506-G 600 420 600 GBJ 2508-G 800 560 800 GBJ 2510-G 1000 700 1000 Unit V V V A A Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC Method) Maximum Forward Voltage at 12.5A DC Maximum DC Reverse Current At Rate DC Blocking Voltage I T Rating for Fusing(t<8.3ms) Typical Junction Capacitandce Per Element (Note 1) Typical Thermal Resistance (Note 2) T Operating Temperature Range Storage Temperature Range 2 VF IR It CJ RθJA TJ TSTG 2 V μA As pF O @TJ=25°C @TJ=125°C 2 C/W O C C O Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink. REV:C QW-BBR60 Page 1 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com/ Glass Passivated Bridge Rectifiers Rating and Characteristics Curves (GBJ25005-G Thru. GBJ2510-G) Fig. 1- Forward Current Derating Curve 25 O WITH HEAKSINK C Comchip SMD Diode Specialist Fig. 2- Typical Forward Characteristics 100 20 Instantaneous Forward Current, (A) Average Forward Current, (A) 10.0 15 O SINGLE CPHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD 1.0 T J = 25°C PULSE WIDTH 300us 10 0.1 5 O WITHOUT C HEA SINK 0.0 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Case Temperature, (°C ) Instantaneous Forward Voltage, (V) Fig. 3- Maximum Non-Repetitive Surge Current 400 1000 Fig. 4- Typical Junction Capacitance Peak Forward Surge Current, (A) 350 300 Capacitance, (pF) 250 200.


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