Recovery Rectifiers. BY229B-800 Datasheet

BY229B-800 Rectifiers. Datasheet pdf. Equivalent

Part BY229B-800
Description (BY229B200 - BY229B800) 8.0 Ampere Surface Mount D2PAK Pkg Ultra Fast Recovery Rectifiers
Feature BY229B200 thru BY229B800 ® Pb Pb Free Plating Product BY229B200 thru BY229B800 TO-263AB/D2PAK-2L .
Manufacture Thinki Semiconductor
Datasheet
Download BY229B-800 Datasheet




BY229B-800
BY229B200 thru BY229B800
®
Pb Free Plating Product
BY229B200 thru BY229B800
Pb
8.0 Ampere Surface Mount D2PAK Pkg Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Switching mode power supply
Inverter/converter
TV receiver,monitor/set top box
TO-263AB/D2PAK-2L
Unit : inch (mm)
Mechanical Data
Case: (Surface Mount TO-220)TO-263AB Package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diodes body
Mounting position: Any
Weight: 2.03 grams approximately
BY229 series with TO-220AC(Heatsink) pkg
BY229X series with ITO-220AC(Insulated) pkg
BY229B series with TO-263AB(D2PAK) pkg
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BY229B200 BY229B400 BY229B600 BY229B800
BY229B-200 BY229B-400 BY229B-600 BY229B-800
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
200
140
200
400 600
280 420
400 600
8.0
100
800
560
800
Maximum slope of reverse recovery current
IF = 2.0 A, VR = 30 V, dI/dt = 20 µs
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
dI/dt
TJ, TSTG
VAC
60
- 40 to + 150
1500
UNIT
V
V
V
A
A
A/μs
°C
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage (1)
8.0 A
BY229B200 BY229B400 BY229B600 BY229B800
SYMBOL
BY229B-200 BY229B-400 BY229B-600 BY229B-800 UNIT
VF 0.98 1.3 1.7 1.8 V
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum recovered stored charge
TJ = 25 °C
TJ = 125 °C
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
IF = 2.0 A, VR = 30 V,
dI/dt = 20 A/µs
IR
trr
Qrr
10
250
35
700
µA
50 ns
nC
Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BY229 series BY229X series BY229B series UNIT
Typical thermal resistance from junction to case
Typical thermal resistance from junction to air
RθJC
2.0
4.8
2.0 °C/W
RθJA
20
-
20 °C/W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



BY229B-800
BY229B200 thru BY229B800
®
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150
Case Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
150
125
TL = 75 °C
8.3 ms Single Half Sine-Wave
100
75
50
25
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 150 °C
TJ = 25 °C
10
1
0.1
0.4
TJ = 100 °C
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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