Recovery Rectifiers. MURF880 Datasheet

MURF880 Rectifiers. Datasheet pdf. Equivalent

Part MURF880
Description (MURF820 - MURF880) 8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers
Feature MURF820 thru MURF880 ® Pb Pb Free Plating Product MURF820 thru MURF880 ITO-220AC .419(10.66) .387.
Manufacture Thinki Semiconductor
Datasheet
Download MURF880 Datasheet



MURF880
MURF820 thru MURF880
®
Pb Free Plating Product
MURF820 thru MURF880
Pb
8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Switching mode power supply
Inverter/converter
TV receiver,monitor/set top box
ITO-220AC
.419(10.66)
.387(9.85)
.167(3.73)
.122(3.10)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.118(3.00)
.079(2.00)
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 grams approximately
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
MUR series with TO-220AC(Heatsink) package
MURF series with ITO-220AC(Insulated) package
MURS series with TO-263AB(D2PAK) package
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MURF820 MURF840 MURF860 MURF880
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Maximum slope of reverse recovery current
IF = 2.0 A, VR = 30 V, dI/dt = 20 µs
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
VRRM
VRMS
VDC
IF(AV)
IFSM
dI/dt
TJ, TSTG
VAC
200
140
200
400 600
280 420
400 600
8.0
100
60
- 40 to + 150
1500
800
560
800
UNIT
V
V
V
A
A
A/μs
°C
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage (1)
8.0 A
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum recovered stored charge
TJ = 25 °C
TJ = 125 °C
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
IF = 2.0 A, VR = 30 V,
dI/dt = 20 A/µs
Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
SYMBOL MURF820 MURF840 MURF860 MURF880
UNIT
VF 0.98
IR
1.3 1.7
10
250
1.8 V
µA
trr 35 50 ns
Qrr 700 nC
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MURseries MURF series MURS series UNIT
Typical thermal resistance from junction to case
Typical thermal resistance from junction to air
RθJC
2.0
4.8
2.0 °C/W
RθJA
20
-
20 °C/W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



MURF880
MURF820 thru MURF880
®
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150
Case Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
150
125
TL = 75 °C
8.3 ms Single Half Sine-Wave
100
75
50
25
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 150 °C
TJ = 25 °C
10
1
0.1
0.4
TJ = 100 °C
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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