Fast Rectifiers. ES3J Datasheet

ES3J Rectifiers. Datasheet pdf. Equivalent

Part ES3J
Description (ES3A - ES3J) Surface Mount Super Fast Rectifiers
Feature ES3A - ES3J 3.0 AMPS. Surface Mount Super Fast Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.
Manufacture Taiwan Semiconductor
Datasheet
Download ES3J Datasheet




ES3J
ES3A - ES3J
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Super Fast Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Super fast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
High frequency rectification
Freewheeling application
Switching mode converters and inverters in computer, automotive
and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.21 g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
3A
50 - 600
V
100 A
150 °C
DO-214AB (SMC)
Configuration
Single die
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT
Marking code on the device
ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J
Repetitive peak reverse voltage
VRRM
50 100 150 200 300 400 500 600 V
Reverse voltage, total rms value
VR(RMS)
35 70 105 140 210 280 350 420
V
Maximum DC blocking voltage
VDC 50 100 150 200 300 400 500 600 V
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
IF(AV)
IFSM
TJ
3
100
- 55 to +150
A
A
°C
Storage temperature
TSTG
- 55 to +150
°C
1 Version:L1708



ES3J
ES3A - ES3J
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
RӨJL
RӨJA
LIMIT
12
47
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage per diode (1)
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
IF = 3A, TJ = 25°C
VF
Reverse current @ rated VR per diode (2)
Junction capacitance
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
TJ = 25°C
TJ = 100°C
1 MHz, VR=4.0V
IR
CJ
Reverse recovery time
Notes:
IF=0.5A , IR=1.0A
IRR=0.25A
trr
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP.
-
-
-
-
-
45
30
-
MAX.
0.95
1.30
1.70
10
500
-
-
35
UNIT
V
V
V
µA
µA
pF
pF
ns
2 Version:L1708







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