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ES5B Dataheets PDF



Part Number ES5B
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (ES5A - ES5J) 5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
Datasheet ES5B DatasheetES5B Datasheet (PDF)

ES5A thru ES5J ® Pb Free Plating Product ES5A thru ES5J Pb 5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes FEATURE Glass passivated chip junction The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals OUTLINE Cathode Band Unit:in.

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ES5A thru ES5J ® Pb Free Plating Product ES5A thru ES5J Pb 5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes FEATURE Glass passivated chip junction The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals OUTLINE Cathode Band Unit:inch(millimeter) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) MECHANICAL DATA Case:SMC/DO-214AB Package Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode band Mounting Position: Any Weight: 0.22 gram approximately 0.103 (2.62) 0.079 (2.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.2) 0.002(0.05) APPLICATION LED SMPS/Industrial power supply HID ballast stabilizer Telecommunication SMPS/LED street lamp SMC/DO-214AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS ES5A ES5B ES5C ES5D ES5E ES5G ES5J UNITS VOLTS VOLTS VOLTS Amps Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance Operating junction and storage temperature range VRRM VRMS VDC I(AV) 50 35 50 100 70 100 150 105 150 200 140 200 5.0 300 210 300 400 280 400 600 420 600 IFSM VF IR trr CJ RQJA TJ,TSTG 0.95 150.0 1.3 10.0 300.0 35 58.0 47.0 -65 to +150 1.7 Amps Volts MA ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ ES5A thru ES5J ® G RATINGS AND CHARACTERISTIC CURVES ES5A thru ES5J AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 5.0 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 4.0 120 3.0 90 2.0 Single Phase Half Wave 60Hz Resistive or inductive Load 60 1.0 30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS FORWARD CURRENT,AMP.


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