Rectifier Diodes. ES5E Datasheet

ES5E Diodes. Datasheet pdf. Equivalent

Part ES5E
Description (ES5A - ES5J) 5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
Feature ES5A thru ES5J ® Pb Free Plating Product ES5A thru ES5J Pb 5.0 Ampere Surface Mount Type Super .
Manufacture Thinki Semiconductor
Datasheet
Download ES5E Datasheet




ES5E
ES5A thru ES5J
®
ES5A thru ES5J
Pb
Pb Free Plating Product
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
FEATURE
Glass passivated chip junction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
MECHANICAL DATA
Case:SMC/DO-214AB Package
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode band
Mounting Position: Any
Weight: 0.22 gram approximately
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
OUTLINE
Unit:inch(millimeter)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.103 (2.62)
0.079 (2.06)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0.002(0.05)
0.320 (8.13)
0.305 (7.75)
SMC/DO-214AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance
Operating junction and storage temperature range
SYMBOLS ES5A ES5B ES5C ES5D ES5E ES5G ES5J
VRRM
VRMS
VDC
50 100 150 200 300 400 600
35 70 105 140 210 280 420
50 100 150 200 300 400 600
I(AV) 5.0
IFSM
VF
IR
trr
CJ
RQJA
TJ,TSTG
150.0
0.95
10.0
300.0
35
58.0
47.0
-65 to +150
1.3
1.7
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
MA
ns
pF
C/W
C
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



ES5E
ES5A thru ES5J
RATINGS AND CHARACTERISTIC CURVES ES5A thru ES5J
G
FIG. 1- FORWARD CURRENT DERATING CURVE
5.0
4.0
3.0
2.0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10 TJ=25 C
PULSE WIDTH=300 Ms
1%DUTY CYCLE
1
0.1
0.01
0
ES5A-ES5D
ES5E-ES5J
0.4 0.8 1.2 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
10
TJ=25 C
1
0.1
1.0
10
REVERSE VOLTAGE,VOLTS
100
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
60
30 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
TJ=100 C
1
TJ=25 C
0.1
0.01 0
20 40
60 80 100
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
®
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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