Recovery Rectifier. ES5DB Datasheet

ES5DB Rectifier. Datasheet pdf. Equivalent

Part ES5DB
Description (ES5AB - ES5JB) 5.0A Surface Mount Super Fast Recovery Rectifier
Feature F.E.C. Semiconductor III. Fast / Ultra Fast / Super Fast Recovery Rectifier 5.0A Surface Mount Super.
Manufacture FEC
Datasheet
Download ES5DB Datasheet



ES5DB
F.E.C. Semiconductor
III. Fast / Ultra Fast / Super Fast Recovery Rectifier
5.0A Surface Mount Super Fast Recovery Rectifier
ES5AB~ES5JB
(Package: SMB (DO-214AA))
FEATURES
For surface mounted applications.
Glass passivated junction chip.
Built-in strain relief, ideal for automated placement.
Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0.
Super Fast recovery for high efficiency.
High temperature soldering : 250/10 seconds at
terminals.
MECHANICAL DATA
Case : Molded plastic
Terminals : Solder plated
Polarity : Indicated by cathode band
Weight : 0.090 grams
0.083 (2.11)
0.075 (1.90)
0.155 (3.94)
0.130 (3.30)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.220 (5.59)
0.185 (4.70)
0.008 (0.203)
MAX.
Case: SMB
Dimensions in inches and (millimetres)
Ratings & Electrical Characteristics
Characteristics
Symbol ES5AB ES5BB ES5CB ES5DB ES5EB ES5GB ES5JB Units
Maximum recurrent peak reverse voltage
VRRM 50 100 150 200 300 400 600 Volts
Maximum RMS voltage
VRMS
35
70 105 140 210 280 420 Volts
Maximum DC blocking voltage
VDC 50 100 150 200 300 400 600 Volts
Maximum average forward rectified current
See Fig. 1 @TL=75
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load.
(JEDEC Method)
Maximum instantaneous forward voltage
@ 5.0 A
Maximum DC reverse current @Ta =25
at rated DC blocking voltage @Ta =100
Io
IFSM
VF
IR
5.0 Amps
150 Amps
0.95 1.30 1.70 Volts
10 µA
300
Maximum reverse recovery time (Note 1)
Trr
35
ns
Typical junction capacitance (Note 2)
Cj
58
PF
Typical thermal resistance
Rth-JA
47
/W
Operating temperature range
Tj
Storage temperature range
Tstg
Notes:
1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and applied VR=4.0V.
-65 to +150
-65 to +150
1



ES5DB
F.E.C. Semiconductor
Ratings and Characteristic Curves of ES5AB~ES5JB
FIG. 1- FORWARD CURRENT DERATING CURVE
5.0
4.0
3.0
2.0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10 TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0
ES5AB-ES5DB
ES5EB-ES5JB
0.4 0.8 1.2 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
10
TJ=25 C
1
0.1
1.0
10 100
REVERSE VOLTAGE,VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
60
30 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
TJ=100 C
1
TJ=25 C
0.1
0.01 0
20 40
60 80 100
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
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