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ES8A Dataheets PDF



Part Number ES8A
Manufacturers CumSumI
Logo CumSumI
Description (ES8A - ES8J) 8.0 AMPS. Surface Mount Super Fast Rectifiers
Datasheet ES8A DatasheetES8A Datasheet (PDF)

ES8A thru ES8J ® Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: O 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 SMC / DO-214AB Unit: inch ( mm ) .280 (7.11) .260 (6.60) .012 (.305) .006 (.152) Mechanical Data Cases:.

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ES8A thru ES8J ® Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: O 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 SMC / DO-214AB Unit: inch ( mm ) .280 (7.11) .260 (6.60) .012 (.305) .006 (.152) Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 gram .050 (1.27) .030 (0.76) .320 (8.13) .305 (7.75) 103(2. . 62) . 079(2. 00) .008(.203) .002(.051) Rating at 25 O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings and Electrical Characteristics Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A Maximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage o @ T A =100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: Symbol V RRM V RMS V DC I(AV) I FSM VF IR Trr Cj R θJA R θJL TJ ES 8A 50 35 50 ES 8B 100 70 100 ES 8C 150 105 150 ES 8D 200 140 200 ES 8F 300 210 300 ES 8G 400 280 400 ES 8H 500 350 500 ES 8J 600 420 600 Units V V V A A 8.0 125 0.95 10 350 35 45 30 75 20 -55 to +150 -55 to +150 o 1.3 1.7 V uA uA nS pF C /W o o T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas C C MAR-14,2006,REV.3 CUMSUMI SEMICONDUCTOR INTERNATIONAL www.cumsumi.com ® 1/2 Free Datasheet http://www.datasheet4u.com/ RoHS compliant 8.0 AMPS. Surface Mount Super Fast Rectifiers . 128(3. 25) 108(2. . 75) . 245(6. 22) . 220(5. 59) ES8A thru ES8J ® FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 10.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 8.0 100 Tj=1250C 10 Tj=850C 4.0 1 Tj=25 0C 0 80 90 100 110 120 o 130 140 150 LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 125 0.1 PEAK FORWARD SURGE CURRENT. (A) 100 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 80 60 40 20 0 NUMBER OF CYCLES AT 60Hz 60 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Tj=25 C PULSE WIDTH-300 S .


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