Fast Rectifiers. ES8B Datasheet

ES8B Rectifiers. Datasheet pdf. Equivalent

Part ES8B
Description (ES8A - ES8J) 8.0 AMPS. Surface Mount Super Fast Rectifiers
Feature ES8A thru ES8J ® Features Glass passivated junction chip For surface mounted application Low profil.
Manufacture CumSumI
Datasheet
Download ES8B Datasheet




ES8B
ES8A thru ES8J
®
8.0 AMPS. Surface Mount
Super Fast Rectifiers
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD RS-481
Weight: 0.093 gram
SMC / DO-214AB
Unit: inch ( mm )
.280 (7.11)
.260 (6.60)
.012 (.305)
.006 (.152)
.050 (1.27)
.030 (0.76)
.008(.203)
.002(.051)
.320 (8.13)
.305 (7.75)
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ES ES ES ES ES ES
8A 8B 8C 8D 8F 8G
Maximum Recurrent Peak Reverse
Voltage
VRRM 50 100 150 200 300 400
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current See Fig. 1
VRMS
VDC
I(AV)
35 70 105 140 210 280
50 100 150 200 300 400
8.0
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
IFSM
125
Maximum Instantaneous Forward Voltage
@ 8.0A
VF
0.95
1.3
Maximum DC Reverse Current
@TA =25oC at Rated DC Blocking Voltage
@ TA=100 oC
Maximum Reverse Recovery Time
( Note 1 )
IR
Trr
10
350
35
Typical Junction Capacitance ( Note 2 )
Cj
45
30
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
RθJA
RθJL
TJ
75
20
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas
ES ES
8H 8J
500 600
350 420
500 600
1.7
Units
V
V
V
A
A
V
uA
uA
nS
pF
oC /W
oC
oC
MAR-14,2006,REV.3
CUMSUMI SEMICONDUCTOR INTERNATIONAL
® www.cumsumi.com
1/2Free Datasheet http://www.datasheet4u.com/



ES8B
ES8A thru ES8J
®
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
10.0
RESISTIVE OR
INDUCTIVE LOAD
0.4X0.4"(10X10mm)
COPPER PAD AREAS
8.0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=1250C
10
4.0 Tj=850C
0
80 90 100 110 120 130 140 150
LEAD TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
125
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
100
80
1
Tj=250C
0.1
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
60
40
20
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
60
Tj=250C
f=1.0MHz
50 Vsig=50mVp-p
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
60
Tj=250C
PULSE WIDTH-300 S
1% DUTY CYCLE
10
1
40
30
0.1
20
10
0
0
1
10
100
0.01
0.4 0.6 0.8 1.0 1.2
1.4 1.6 1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
MAR-14,2006,REV.3
CUMSUMI SEMICONDUCTOR INTERNATIONAL
® www.cumsumi.com
2/2Free Datasheet http://www.datasheet4u.com/







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