Document
SF1601G thru SF1608G
®
Pb
Pb Free Plating Product
SF1601G thru SF1608G
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.03 gram approximately
.038(0.96) .019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive Common Cathode
Negative Common Anode Suffix "A"
Doubler Series Connection Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Common Cathode Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D"
o
SYMBOL VRRM VRMS VDC IF(AV)
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD
UNIT V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 16.0
300 210 300
400 280 400
600 420 600
IFSM
175
150
A
VF
0.98 10.0 250 35 90 2.2 -55 to + 150
1.3
1.7
V uA uA nS pF
o
IR Trr CJ R JC TJ, TSTG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
SF1601G thru SF1608G
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
13
175 150 125 100 75 50 25 0
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
SF1601G-SF1604G
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
SF1605G-SF1606G
100
TJ=125 C
o
1.0
SF1608G
10 TJ=25 C 1
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0.1
0.01 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.