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SF1604GA Dataheets PDF



Part Number SF1604GA
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (SF1601GA - SF1608GA) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Datasheet SF1604GA DatasheetSF1604GA Datasheet (PDF)

SF1601G thru SF1608G ® Pb Pb Free Plating Product SF1601G thru SF1608G TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO.

  SF1604GA   SF1604GA



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SF1601G thru SF1608G ® Pb Pb Free Plating Product SF1601G thru SF1608G TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.03 gram approximately .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Positive Common Cathode Negative Common Anode Suffix "A" Doubler Series Connection Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D" o SYMBOL VRRM VRMS VDC IF(AV) SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 175 150 A VF 0.98 10.0 250 35 90 2.2 -55 to + 150 1.3 1.7 V uA uA nS pF o IR Trr CJ R JC TJ, TSTG CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ SF1601G thru SF1608G ® FIG.1 - FORWARD CURRENT DERATING CURVE 16 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 13 175 150 125 100 75 50 25 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 SF1601G-SF1604G INSTANTANEOUS REVERSE CURRENT, MICROAMPERES SF1605G-SF1606G 100 TJ=125 C o 1.0 SF1608G 10 TJ=25 C 1 o 0.1 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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