Recovery Diode. SF2004GA Datasheet

SF2004GA Diode. Datasheet pdf. Equivalent

Part SF2004GA
Description (SF2001GA - SF2008GA) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
Feature SF2001G thru SF2008G ® Pb Pb Free Plating Product SF2001G thru SF2008G TO-220AB .419(10.66) .387(.
Manufacture Thinki Semiconductor
Datasheet
Download SF2004GA Datasheet




SF2004GA
SF2001G thru SF2008G
®
SF2001G thru SF2008G
Pb
Pb Free Plating Product
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Mechanical Data
¬ Case: TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Series Connection
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SF2001G SF2002G SF2004G SF2005G SF2006G SF2008G
SYMBOL SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA UNIT
SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD
VRRM
50
100 200 300 400 600 V
VRMS
35
70 140 210 280 420 V
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175 A
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
TJ, TSTG
0.975
120
1.3
10.0
250
35
-55 to +150
70
1.5 V
uA
uA
nS
pF
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



SF2004GA
SF2001G thru SF2008G
®
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
15
SF2001G-SF2004G
SF2005G-SF2007G
10
SF2008G
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200 Pulse Width 8.3ms
Single Half-Sire-Wave
175 (JEDEC Method)
150 SF2001G-SF2004G
125
100
SF2005G-SF2008G
75
50
25
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100 TJ=125oC
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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