Document
MURF1605 thru MURF1660
®
Pb
Pb Free Plating Product
MURF1605 thru MURF1660
ITO-220AB
.112(2.85) .100(2.55)
.406(10.3) .381(9.7) .134(3.4) .118(3.0)
16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.189(4.8) .165(4.2) .130(3.3) .114(2.9)
.272(6.9) .248(6.3) .606(15.4) .583(14.8)
Mechanical Data Case: Molded plastic Isolated/Insulated ITO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.03 grams
.055(1.4) .039(1.0) .035(0.9) .011(0.3) .1 (2.55) .1 (2.55)
.161(4.1)MAX
.543(13.8) .512(13.0)
Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc..
.071(1.8) .055(1.4)
.114(2.9) .098(2.5) .032(.8) MAX
Case
Case
Case
Case
Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N"
Doubler Suffix "D"
Reverse Doubler Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E"
o
MURF1605CT MURF1610CT MURF1620CT MURF1630CT MURF1640CT MURF1660CT
SYMBOL VRRM VRMS VDC IF(AV)
MURF1605N MURF1605D MURF1605E
MURF1610N MURF1620N MURF1630N MURF1640N MURF1660N MURF1610D MURF1620D MURF1630D MURF1640D MURF1660D MURF1610E MURF1620E MURF1630E MURF1640E MURF1660E
UNIT V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 16.0
300 210 300
400 280 400
600 420 600
IFSM
175
150
A
VF
0.98 10.0 250 35 90 2.2 -55 to + 150
1.3
1.7
V uA uA nS pF
o
IR Trr CJ R JC TJ, TSTG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
MURF1605 thru MURF1660
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
13
175 150 125 100 75 50 25 0
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10
MURF1605-MURF1620
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
MURF1630-MURF1640
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
100
TJ=125 C
o
1.0
MURF1660
10 TJ=25 C 1
o
0.1
0.01 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.