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MURF1640N Dataheets PDF



Part Number MURF1640N
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (MURF1605 - MURF1660) 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Datasheet MURF1640N DatasheetMURF1640N Datasheet (PDF)

MURF1605 thru MURF1660 ® Pb Pb Free Plating Product MURF1605 thru MURF1660 ITO-220AB .112(2.85) .100(2.55) .406(10.3) .381(9.7) .134(3.4) .118(3.0) 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .189(4.8) .165(4.2) .130(3.3) .114(2.9) .272(6.9) .248(6.3) .606(15.4) .583(14.8) Mechanical Data .

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MURF1605 thru MURF1660 ® Pb Pb Free Plating Product MURF1605 thru MURF1660 ITO-220AB .112(2.85) .100(2.55) .406(10.3) .381(9.7) .134(3.4) .118(3.0) 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .189(4.8) .165(4.2) .130(3.3) .114(2.9) .272(6.9) .248(6.3) .606(15.4) .583(14.8) Mechanical Data Case: Molded plastic Isolated/Insulated ITO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.03 grams .055(1.4) .039(1.0) .035(0.9) .011(0.3) .1 (2.55) .1 (2.55) .161(4.1)MAX .543(13.8) .512(13.0) Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .071(1.8) .055(1.4) .114(2.9) .098(2.5) .032(.8) MAX Case Case Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N" Doubler Suffix "D" Reverse Doubler Suffix "E" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E" o MURF1605CT MURF1610CT MURF1620CT MURF1630CT MURF1640CT MURF1660CT SYMBOL VRRM VRMS VDC IF(AV) MURF1605N MURF1605D MURF1605E MURF1610N MURF1620N MURF1630N MURF1640N MURF1660N MURF1610D MURF1620D MURF1630D MURF1640D MURF1660D MURF1610E MURF1620E MURF1630E MURF1640E MURF1660E UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 175 150 A VF 0.98 10.0 250 35 90 2.2 -55 to + 150 1.3 1.7 V uA uA nS pF o IR Trr CJ R JC TJ, TSTG CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MURF1605 thru MURF1660 ® FIG.1 - FORWARD CURRENT DERATING CURVE 16 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 13 175 150 125 100 75 50 25 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 MURF1605-MURF1620 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 MURF1630-MURF1640 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 TJ=125 C o 1.0 MURF1660 10 TJ=25 C 1 o 0.1 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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