Document
MURF1005 thru MURF1060
Pb
®
Pb Free Plating Product
MURF1005 thru MURF1060
ITO-220AB
.406(10.3) .381(9.7) .134(3.4) .118(3.0)
10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:ITO-220AB Isolated/Insulated ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:As marked on diode body ¬ Mounting position: Any ¬ Weight: 2.24 grams
Unit : inch (mm)
.189(4.8) .165(4.2) .130(3.3) .114(2.9)
.112(2.85) .100(2.55)
.272(6.9) .248(6.3) .606(15.4) .583(14.8)
.055(1.4) .039(1.0) .035(0.9) .011(0.3) .1 (2.55) .1 (2.55)
.161(4.1)MAX
.543(13.8) .512(13.0)
.071(1.8) .055(1.4)
.114(2.9) .098(2.5) .032(.8) MAX
Case
Case
Case
Case
Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N"
Doubler Suffix "D"
Reverse Doubler Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E"
MURF1005CT MURF1010CT MURF1020CT MURF1030CT MURF1040CT MURF1060CT
SYMBOL VRRM VRMS VDC IF(AV)
MURF1005N MURF1005D MURF1005E
MURF1010N MURF1010D MURF1010E
MURF1020N MURF1020D MURF1020E
MURF1030N MURF1030D MURF1030E
MURF1040N MURF1060N MURF1040D MURF1040E MURF1060D MURF1060E
UNIT V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 10.0
300 210 300
400 280 400
600 420 600
IFSM
100
A
VF IR Trr CJ R JC TJ, TSTG
0.98 10.0 250 35 65 2.2 -55 to +150
1.3
1.7
V uA uA nS pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
MURF1005 thru MURF1060
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10 100
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, AMPERES
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
8
80
6
60
4
40
2 60 Hz Resistive or Inductive load 0 0 50 100
o
20
0 150 1 10 100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
MUR1005-MUR1020 10
100
TJ=125 C
o
MUR1030-MUR1040 1 MUR1060
10 TJ=25 C 1
o
0.1 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.