FAST RECTIFIERS. BYV26C Datasheet

BYV26C RECTIFIERS. Datasheet pdf. Equivalent

Part BYV26C
Description (BYV26A - BYV26E) SUPER FAST RECTIFIERS
Feature BL FEATURES GALAXY ELECTRICAL BYV26A(Z) - - - BYV26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.0.
Manufacture Galaxy Semi-Conductor
Datasheet
Download BYV26C Datasheet



BYV26C
BL GALAXY ELECTRICAL
SUPER FAST RECTIFIERS
BYV26A(Z)---BYV26E(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV26A BYV26B BYV26C BYV26D BYV26E UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5 mm lead length, @TA=75
Peak forw ard surge current
VRRM
VRMS
VDC
IF(AV)
10ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
RθJA
TJ
Storage temperature range
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
TSTG
200
140
200
400 600 800 1000 V
280 420 560 700
V
400 600 800 1000 V
1.0 A
30.0
2.5
5.0
150.0
30
45
100
- 55 ----- + 150
- 55 ----- + 150
A
V
A
75 ns
40 pF
/W
www.galaxycn.com
Document Number 0264013
BLGALAXY ELECTRICAL
1.



BYV26C
RATINGS AND CHARACTERISTIC CURVES
BYV26A (Z)--- BYV26E(Z)
FIG.1 -- FORWARD DERATING CURVE
1.0
0.8
0.6
0.4
S ingle P ha se
H a lf W a ve 5 0 H Z
0.2 R e sistive or
In d u ctive L o a d
0 .3 75 "(9.5 m m )Le ad L en gth
0
0 2 5 50 7 5 1 0 0 1 2 5 1 5 0 1 7 5
AMBIENT TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
2.0
1.0
0.1
0.01
0
TJ =25
Pulse W idth=300µ s
1 .0 2 .0 3 .0
4 .0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --PEAK FORWARD SURGE CURRENT
50
40
30
20
10
0
1
10ms Single Half
Sine-Wave
24
10
20 40 100
NUMBER OF CYCLES AT 50Hz
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
40
20
10 TJ=25
f=1.0MHZ
4
2
1
0.1 0.2 0.4 1
2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
Document Number 0264013
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
Free Datasheet http://www.datasheet4u.com/







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)