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BYV26D Dataheets PDF



Part Number BYV26D
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (BYV26A - BYV26G) 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
Datasheet BYV26D DatasheetBYV26D Datasheet (PDF)

BYV26A thru BYV26G ® Pb Free Plating Product BYV26A thru BYV26G 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Pb Features D Glass passivated junction D Hermetically sealed package D Very low switching losses D Low reverse current D High reverse voltage Unit: inch(mm) Applications Switched mode power supplies High–frequency inverter circuits 94 9539 Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz.

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BYV26A thru BYV26G ® Pb Free Plating Product BYV26A thru BYV26G 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Pb Features D Glass passivated junction D Hermetically sealed package D Very low switching losses D Low reverse current D High reverse voltage Unit: inch(mm) Applications Switched mode power supplies High–frequency inverter circuits 94 9539 Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Reverse Recovery Time (Note 1) Maximum DC Reverse Current @ TA=25 C o at Rated DC Blocking Voltage @ TA =150 C Maximum Instantaneous Forward Voltage o @ 1.0A @ T A=25 C o @ 1.0A @ T A=175 C Maximum Reverse recovery Current Slope dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) o Symbol BYV 26A VRRM VDC I(AV) IFSM Trr IR VF BYV 26B BYV 26C BYV 26D BYV 26E BYV 26G Units V V A A 200V 300V 400V 500V 600V 700V 800V 900V 1.0 30 1000V 1400V 1100V 1500V 30 5.0 100 75 nS uA uA 2.5 1.3 7 45 40 -55 to +175 -55 to +175 V A/uS o dv/dt Cj R θJA Operating Temperature Range Storage Temperature Range TJ TSTG pF C /W o C o C Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on PCB. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ BYV26A thru BYV26G ® Characteristics (Tj = 25_ C unless otherwise specified) PR – Maximum Reverse Power Dissipation ( mW ) 600 RthJA=45K/W VR=1000V RthJA=100K/W 300 600V 200 100 0 0 40 80 120 160 200 95 9729 1000 I R – Reverse Current ( m A ) 500 400 100 800V 10 400V 200V 1 VR = VR RM 0.1 0 40 80 120 160 200 95 9728 Tj – Junction Temperature ( °C ) Tj – Junction Temperature ( °C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Max. Reverse Current vs. Junction Temperature 1.2 I FAV– Average Forward Current ( A ) I F – Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0 95 9730 10 Tj = 175°C RthJA=45K/W L=10mm 1 Tj = 25°C 0.1 RthJA=100K/W PCB 0.01 0.001 40 80 120 160 200 95 9731 0 1 2 3 4 5 6 7 Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 4. Max. Forward Current vs. Forward Voltage Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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