Document
BYV26A thru BYV26G
®
Pb Free Plating Product
BYV26A thru BYV26G
1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
SOD-57
Pb
Features
D Glass passivated junction D Hermetically sealed package D Very low switching losses D Low reverse current D High reverse voltage
Unit: inch(mm)
Applications
Switched mode power supplies High–frequency inverter circuits
94 9539
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Reverse Recovery Time (Note 1) Maximum DC Reverse Current @ TA=25 C o at Rated DC Blocking Voltage @ TA =150 C Maximum Instantaneous Forward Voltage o @ 1.0A @ T A=25 C o @ 1.0A @ T A=175 C
Maximum Reverse recovery Current Slope dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3)
o
Symbol BYV 26A VRRM VDC I(AV) IFSM Trr IR VF
BYV 26B
BYV 26C
BYV 26D
BYV 26E
BYV 26G
Units
V V
A A
200V 300V
400V 500V
600V 700V
800V 900V
1.0 30
1000V 1400V 1100V 1500V
30
5.0 100
75
nS
uA uA
2.5 1.3 7 45 40 -55 to +175 -55 to +175
V A/uS
o
dv/dt
Cj R θJA
Operating Temperature Range Storage Temperature Range
TJ TSTG
pF C /W o C o C
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
BYV26A thru BYV26G
®
Characteristics (Tj = 25_ C unless otherwise specified)
PR – Maximum Reverse Power Dissipation ( mW ) 600 RthJA=45K/W VR=1000V RthJA=100K/W 300 600V 200 100 0 0 40 80 120 160 200
95 9729
1000 I R – Reverse Current ( m A )
500 400
100
800V
10
400V 200V
1 VR = VR RM 0.1 0 40 80 120 160 200
95 9728
Tj – Junction Temperature ( °C )
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
1.2 I FAV– Average Forward Current ( A ) I F – Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0
95 9730
10 Tj = 175°C RthJA=45K/W L=10mm 1 Tj = 25°C
0.1
RthJA=100K/W PCB
0.01
0.001 40 80 120 160 200
95 9731
0
1
2
3
4
5
6
7
Tamb – Ambient Temperature ( °C )
VF – Forward Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Forward Current vs. Forward Voltage
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.