FAST RECTIFIERS. ES1D Datasheet

ES1D RECTIFIERS. Datasheet pdf. Equivalent

Part ES1D
Description (ES1A - ES1J) 1.0 AMPERE SURFACE MOUNT SUPER FAST RECTIFIERS
Feature ES1A thru ES1J ES1A thru ES1J Pb ® Pb Free Plating Product 1.0 AMPERE SURFACE MOUNT SUPER FAST RE.
Manufacture Thinki Semiconductor
Datasheet
Download ES1D Datasheet




ES1D
ES1A thru ES1J
®
Pb Free Plating Product
ES1A thru ES1J
Pb
1.0 AMPERE SURFACE MOUNT SUPER FAST RECTIFIERS
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Easy pick and place
For surface mounted application
Low profile package
Built-in strain relief
Superfast recovery times for high efficiency
High temperature soldering : 250/10 seconds at terminals.
SMA-W
Mechanical Data
Case: DO-214AC(SMA-W), molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026 guaranteed
Polarity: Color band denotes cathode end
Unit:(mm)
Absolute Maximum Ratings and Characteristics
Ratings at 25ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
Inductive load. For capacitive load, derate current by 20%.
Symbols ES1A ES1B ES1C ES1D ES1E ES1G ES1J Units
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current TL = 75
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum forward voltage at 1.0A
Maximum reverse current
at TA = 25
at rated DC blocking voltage at TA = 100
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR
50 100 150 200 300 400 600 V
35 70 105 140 210 280 420 V
50 100 150 200 300 400 600 V
1.0 A
30 A
0.95 1.25 1.70 V
5.0
uA
100
Typical Junction Capacitance
at VR = 4.0 V, f = 1 MHZ
CJ
10 pF
Typical Reverse Recovery Time
at IF = 0.5A, IR = 1.0A, Irr = 0.25A
Typical thermal resistance (Note 1)
trr
RθJL
35 ns
35 OC/W
Operating junction and storage temperature range
TJ ,TS
-55 to +150
OC
Notes:1. Thermal resistance from junction to lead mounted on P.C.B. with 0.3 X 0.3” (8.0 X 8.0 mm ) copper pad areas.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



ES1D
ES1A thru ES1J
®
18
16
14
12
10
8.0
6.0
4.0
2.0
0
0.1
Tj= 25OC
f= 1 .0MHz
Vsig = 50mVp -p
1 10
REVERSE VOLTAGE, VOLTS
100
FIG.1 TYPICAL JUNCTION CAPACITANCE
1.5
1.0
0.5 SINGLE PHASE, HALF-WAVE, 60Hz RESISTIVE
OR INDUCTIVE LOAD P.C.B MOUNTED
ON 0.3 x 0.3" (8.0 x 8.0 mm)COPPER PAD AREAS
0
0 25 55
75
LEAD TEMPERATURE,OC
125
FIG.2 MAXIMUM AVERAGE FORWARD CURRENT DERATING
1000
100
10
TJ= 125OC
TJ= 75OC
1.0
TJ= 25OC
0.1
20 40
60 80 100 120
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
FIG.3 TYPICAL REVERSE CHARACTERISTICS
35
30
25
20
15
10
5
1 2 4 6 8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.5 MAXIMUM NON-REPEITIVE SURGE CURRENT
10
50-200V
1.0
300-400V
.1 600V
.01
TJ= 2 5OC
.001
0.4
0.6 0.8 1.0 1.2
1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE VOLTS
FIG.4 TYPICAL FORWARD CHARACTERISTICS
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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