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HER506 Dataheets PDF



Part Number HER506
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description HIGH EFFICIENT RECTIFIER DIODES
Datasheet HER506 DatasheetHER506 Datasheet (PDF)

HER501 - HER508 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guarantee.

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HER501 - HER508 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) HER 501 50 35 50 HER 502 100 70 100 HER 503 200 140 200 HER 504 300 210 300 5.0 HER 505 400 280 400 HER 506 600 420 600 HER 507 800 560 800 HER 508 1000 700 1000 UNIT V V V A IFSM 200 A VF IR IR(H) Trr 1.1 10 50 50 50 - 65 to + 150 - 65 to + 150 1.7 V µA µA Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range 75 ns pf °C °C CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 A D.U.T. 50 Vdc (approx) 1Ω 0 - 0.25 A Trr + PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 5 200 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 160 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 4 3 120 2 80 1 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 40 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 TJ = 100 °C FORWARD CURRENT, AMPERES Pulse Width = 300 µs 2% Duty Cycle TJ = 25 °C 10 1.0 HER501-HER505 1.0 HER506-HER508 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : April 2, 2002 .


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