FAST RECTIFIERS. ES2GA Datasheet

ES2GA RECTIFIERS. Datasheet pdf. Equivalent

Part ES2GA
Description (ES2AA - ES2JA) 2.0 AMPERE SURFACE MOUNT SUPER FAST RECTIFIERS
Feature ES2AA thru ES2JA ES2AA thru ES2JA SMA-W ® Pb Pb Free Plating Product 2.0 AMPERE SURFACE MOUNT SU.
Manufacture Thinki Semiconductor
Datasheet
Download ES2GA Datasheet



ES2GA
ES2AA thru ES2JA
®
ES2AA thru ES2JA
Pb Free Plating Product
Pb
2.0 AMPERE SURFACE MOUNT SUPER FAST RECTIFIERS
Features
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
High temperature soldering:
260OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
SMA-W
Unit: (mm)
Mechanical Data
Cases: Molded plastic SMA-W
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD RS-481
Weight: 0.093 gram
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ES ES ES ES ES ES ES ES
2AA 2BA 2CA 2DA 2FA 2GA 2HA 2JA
Maximum Recurrent Peak Reverse
Voltage
VRRM 50 100 150 200 300 400 500 600
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 350 420
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 500 600
Maximum Average Forward Rectified
Current See Fig. 1
I(AV)
2.0
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
IFSM
50
Maximum Instantaneous Forward Voltage
@ 2.0A
VF
0.95
1.3 1.7
Maximum DC Reverse Current
@TA =25oC at Rated DC Blocking Voltage
@ TA=100 oC
Maximum Reverse Recovery Time
( Note 1 )
IR
Trr
10
350
35
Typical Junction Capacitance ( Note 2 )
Cj
25
20
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
RθJA
RθJL
TJ
75
20
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas
Units
V
V
V
A
A
V
uA
uA
nS
pF
oC /W
oC
oC
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



ES2GA
ES2AA thru ES2JA
®
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.0
RESISTIVE OR
INDUCTIVE LOAD
0.4X0.4"(10X10mm)
COPPER PAD AREAS
2.0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=1250C
10
1.0 Tj=850C
0
0 25 50 75 90 115 140 165
LEAD TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
60
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
50
40
1
Tj=250C
0.1
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
30
20
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
60
Tj=250C
f=1.0MHz
50 Vsig=50mVp-p
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
60
Tj=250C
PULSE WIDTH-300 S
1% DUTY CYCLE
10
1
40
30 ES2AA-DA
20 ES2FA-JA
10
0.1
0
0
1
10
100
0.01
0.4 0.6 0.8 1.0 1.2
1.4 1.6 1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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